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An inductively-coupled-plasma reactive-ion-etcher (ICP-RIE), capable of flexible etching of different materials. Whole system with all required components. Capable of handling wafers up to 200 mm in diameter. There must be a loadlock and (semi)automatic loading of single-wafers and small chips between loadlock and process chamber. The substrate electrode temperature should be controllable between at least -150 °C and 300 °C.
Contracting authority (JYU) may suspend the procurement procedure if the tenders exceed the budget available for the procurement.
Prior references of supplying comparable systems are required.