Atomic Layer Deposition (ALD) system upgrade

Information

Direct award
5/24/2024 11:35 AM (GMT+02:00)
6/13/2024 12:00 PM (GMT+02:00)

Buyer

Tampere University Foundation sr Tampere University Foundation sr
Arto Heikkilä Arto Heikkilä
33100 Tampere
Finland
2844561-8

Closing date has passed.

Assignment text

BACKGROUND INFO

TAU Tampere University (hereinafter ‘TAU’) is well prepared for the fabrication of flexible electronics, especially thin film transistors (TFT) in conjunction with ALD dielectric and semiconductor films in the Laboratory for Future Electronics (LFE, https://research.tuni.fi/lfe/), a specialized electronics printing and solution processed device fab. TAU’s LFE laboratory has over 250 m2 dedicated lab space, which includes 60 m2 dust-free processing laboratory.

ALD (Atomic Layer Deposition) system was tendered during year 2019 and has been in use at TAU since 2020.

NEED AND CONCLUSION FOR DIRECT AWARD

Additional hot sources (earlier available Hf and Ta) are required for Beneq TFS 200 ALD system to be able to fluently and without cross-contamination deposit the various materials required by the existing and future projects.

Technically and due to safety issues the additional parts must be designed and be proven to be compatible with the TFS 200.

 

 

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